? 2008 ixys all rights reserved 1 - 3 20081126f gwm 220-004p3 ixys reserves the right to change limits, test conditions and dimensions. preliminary data v dss = 40 v i d25 = 180 a r dson typ. = 2.0 m w three phase full bridge with trench mosfets in dcb isolated high current package s2 l- l1 l2 l3 g2 s1 g1 s3 g3 s4 g4 s5 g5 s6 g6 l+ symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. r dson on chip level at t vj = 25c v gs = 10 v t vj = 125c 2.0 3.2 2.6 m w mw v gs(th) v ds = 20 v; i d = 1 ma 2 4 v i dss v ds = v dss ; v gs = 0 v t vj = 25c t vj = 125c 0.1 1 a ma i gss v gs = 20 v; v ds = 0 v 0.2 a q g q gs q gd v gs = 10 v; v ds = 14 v; i d = 25 a 94 18 29 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 30 v i d = 25 a; r g = 10 ? inductive load 40 85 140 90 ns ns ns ns e on e off e recoff tbd tbd tbd mj mj mj r thjc r thjh with heat transfer paste (ixys test setup) 1.3 1.0 1.6 k/w k/w mosfets symbol conditions maximum ratings v dss t vj = 25c to 150c 40 v v gs 20 v i d25 i d90 t c = 25c t c = 90c 180 138 a a i f25 i f90 t c = 25c (diode) t c = 90c (diode) 115 75 a a surface mount device straight leads bent leads applications ac drives ? in automobiles - electr ic power steering - star ter generator ? in industr ial vehicles - propulsion dr ives - f ork lift drives ? in batter y supplied equipment features ? mosfets in trench technology: - lo w rdson - optimiz ed intrinsic reverse diode ? pac kage: - high le vel of integration - high current capability 300 a max. - aux. terminals for mosfet control - ter minals for soldering or welding connections - isolated dcb cer amic base plate with optimiz ed heat transfer ? space and weight savings package options ? 3 lead f orms available - str aight leads (sl) - smd lead version (smd) - bent leads (bl)
? 2008 ixys all rights reserved 2 - 3 20081126f gwm 220-004p3 ixys reserves the right to change limits, test conditions and dimensions. component symbol conditions maximum ratings i rms per pin in main current paths (p+, n-, l1, l2, l3) may be additionally limited by external connections 300 a t vj t stg -55...+175 -55...+125 c c v isol i isol < 1 ma, 50/60 hz, f = 1 minute 1000 v~ f c mounting force with clip 50 - 250 n symbol conditions characteristic values min. typ. max. r pin to chip with heatsink compound 0.6 mw c p coupling capacity between shorted pins and mounting tab in the case 160 pf weight typ. 25 g equivalent circuits for simulation thermal response junction - case (typ.) c th1 = tbd j/k; r th1 = tbd k/w c th2 = tbd j/k; r th2 = tbd k/w p v t j r t h1 r t h2 c t h2 c t h1 t c source-drain diode symbol conditions characteristic values (t j = 25c, unless otherwise specifed) min. typ. max. v sd (diode) i f = 110 a; v gs = 0 v 1.0 1.6 v t rr q rm i rm i f = 20 a; -di f /dt = 100 a/s; v r = 20 v 70 tbd tbd ns c a
? 2008 ixys all rights reserved 3 - 3 20081126f gwm 220-004p3 ixys reserves the right to change limits, test conditions and dimensions. s traight l eads gwm 220-003p3-sl g1 s1 g2 s2 g3 s3 g4 s4 g5 s5 g6 s6 l+ l- l1 l2 l3 b ent l eads gwm 220-003p3-bl g1 s1 g2 s2 g3 s3 g4 s4 g5 s5 g6 s6 l+ l- l1 l2 l3 s urface m ount d evice gwm 220-003p3-smd g1 s1 g2 s2 g3 s3 g4 s4 g5 s5 g6 s6 l+ l- l1 l2 l3 leads ordering part name & packing unit marking part marking delivering mode base qty. ordering code straight standard gwm 220-004p3 - sl gwm 220-004p3 blister 36 503 169 smd standard gwm 220-004p3 - smd gwm 220-004p3 blister 36 503 176 bent standard gwm 220-004p3 - bl gwm 220-004p3 blister 36 contact factory
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